Towards Low-Noise Microwave Amplifiers with Outstanding Room-Temperature Noise Performance

Project Goal:

The objective of this research is to develop a new type of high electron mobility
transistor (HEMT) with potential to exhibit unprecedented low noise figure at room temperature.
This advance will be achieved by incorporating a strained barrier layer into the epitaxial stack so
as to improve the quantum confinement of electrons in the channel. Recent findings from our team
in the Cahill Radio Astronomy Laboratory (CRAL) indicate that such devices could exhibit room-temperature
noise figures competitive with those of present amplifiers at cryogenic temperatures.
This works aims to perform the initial development of this concept by fabricating and characterizing
the DC and microwave performance of strained-barrier HEMTs. This successful demonstration of
improved quantum confinement positively impacting microwave noise performance will set the stage
for further development and optimization of the concept for applications. The availability of low
noise amplifiers that do not require cryogenic cooling will have a transformative effect on the science
return of future space missions.

Co-Investigators

• Kieran Cleary (California Institute of Technology)
• Anthony Readhead (California Institute of Technology)
• Jacob Kooi (Jet Propulsion Laboratory)
• Pekka Kangaslahti (Jet Propulsion Laboratory)
• Zubair Abdulla (Jet Propulsion Laboratory)